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Review of Cu-Cu direct bonding technology in advanced packaging
Ze-Hao Zhao1,2, Li-Yin Gao1,2, Zhi-Quan Liu1,2
1Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
Nanotechnology
|June 2, 2025
Summary
Copper-copper direct bonding offers advanced electronic interconnects, overcoming limitations of traditional solder. This review highlights methods for low-temperature copper bonding, crucial for next-generation electronics.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Traditional tin-based solder interconnects exhibit reliability issues at narrow spacing.
- Increasing demands for high-performance electronics necessitate advanced interconnect solutions.
- Copper-copper (Cu-Cu) direct bonding presents advantages like narrower spacing and superior conductivity.
Purpose of the Study:
- To review recent advancements in Cu-Cu direct bonding technology.
- To identify key areas for improving low-temperature Cu-Cu bonding.
- To provide guidance for future development in Cu-Cu bonding.
Main Methods:
- Review of literature on Cu microstructure enhancement.
- Summary of surface treatment techniques for Cu bonding.
- Analysis of innovative bonding processes and assessment methodologies.
Main Results:
- Nanotwinned and nanocrystalline Cu microstructures facilitate low-temperature bonding.
- Surface treatments like chemical, plasma, and passivation enhance bonding performance.
- Innovations in bonding processes and reliability assessment methods were discussed.
Conclusions:
- Cu-Cu direct bonding is a promising technology for advanced electronics.
- Optimizing Cu microstructure and surface treatments are key to low-temperature bonding.
- Further research in bonding processes and evaluation methods will drive technological progress.
