A Nanomaterial-Independent Biosensor Based on Gallium Arsenide High-Electron-Mobility Transistors for Rapid and...

Area of Science:

• Semiconductor device physics
• Biosensor technology
• Nanotechnology for diagnostics

Background:

• Biofield effect transistors (bio-FETs) show promise for pathogen detection due to sensitivity and speed.
• Current bio-FETs often require complex electrical modulation, limiting practical use.
• Need for simplified, manufacturable biosensors for widespread application.

Purpose of the Study:

• To develop a structurally simplified Gallium-Arsenic-based high-electron-mobility transistor biosensor (GaAs-bioHEMT).
• To demonstrate sensitive and rapid detection of SARS-CoV-2 nucleocapsid protein (NP).
• To eliminate the need for nanomaterial enhancement and external reference electrodes.

Main Methods:

• Fabrication of GaAs-bioHEMT using wafer-level processes.
• Achieved high electron mobility (7467.417 cm² V^-1 s^-1).
• Operated the biosensor in depletion mode for SARS-CoV-2 NP detection.

Main Results:

• Demonstrated effective detection of SARS-CoV-2 nucleocapsid protein (NP).
• Achieved a low detection limit of 0.125 fg mL^-1 within 5 minutes.
• Simplified design without nanomaterial modification or external electrodes.

Conclusions:

• The GaAs-bioHEMT offers a simplified, highly sensitive platform for pathogen detection.
• The design is compatible with conventional semiconductor manufacturing, enabling scalability.
• Shows significant potential for point-of-care (POC) diagnostics and clinical testing.