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Updated: Sep 19, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Dual-Gate Carbon Nanotube Field Effect Transistors for Physically Unclonable Functional Applications
Jeong Yeon Im1, Hyo-In Yang1, Ji Won Park1
1School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
This study introduces a novel quaternary-state physical unclonable function (PUF) using a dual-gate carbon nanotube (CNT) field-effect transistor (FET). This innovative design offers enhanced hardware security for encryption by generating unique, unclonable keys.
Area of Science:
- Materials Science
- Electrical Engineering
- Cryptography
Background:
- Physical unclonable functions (PUFs) are crucial for hardware security, providing unique device identifiers.
- Traditional PUFs often rely on binary states, limiting their security potential.
- Carbon nanotube (CNT) networks offer inherent randomness suitable for PUF applications.
Purpose of the Study:
- To develop a novel quaternary-state PUF using a lateral dual-gate CNT FET.
- To leverage the inherent randomness of CNT networks for secure key generation.
- To enhance hardware encryption security through advanced PUF implementation.
Main Methods:
- Fabrication of a lateral dual-gate CNT FET device.
- Utilizing the random CNT network for key generation.
- Implementing quaternary states via dual-gate operation and threshold voltage analysis.
Main Results:
- Demonstrated quaternary state generation from a single CNT FET.
- Achieved PUF performance indicators (interchip Hamming distance, uniformity) near ideal values (~50%).
- Showcased enhanced security compared to traditional binary PUFs.
Conclusions:
- CNT-based dual-gate PUF devices offer a scalable and secure solution for hardware encryption.
- The quaternary state implementation significantly improves security.
- This technology presents a promising advancement over single-gate PUF designs.
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