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Updated: Sep 19, 2025

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
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High Entropy Alloy Thin Films as Efficient Spin-Orbit Torque Sources for Spintronic Memories
Peng Wang1, Andrea Migliorini1, Yung-Cheng Li1,2
1Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany.
Advanced Materials (Deerfield Beach, Fla.)
|June 5, 2025
Summary
High entropy alloys (HEAs) are now viable for spintronics. Iridium-based HEAs efficiently convert charge to spin current, enabling advanced spintronic devices with low switching currents and fast domain wall motion.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- High entropy alloys (HEAs) offer unique properties but their spintronic applications are unexplored.
- Developing efficient spin-current generation layers is crucial for spintronic devices.
Purpose of the Study:
- To investigate iridium-based HEAs as spin Hall layers for spintronic applications.
- To evaluate their efficiency in charge-to-spin current conversion and compatibility with magnetic heterostructures.
Main Methods:
- Magnetron sputtering at room temperature to grow iridium-based HEA films.
- Spin-torque ferromagnetic resonance and harmonic Hall measurements to quantify spin-orbit torque.
- Epitaxial growth of magnetic multilayers and synthetic antiferromagnets.
Main Results:
- Iridium-based HEAs demonstrate highly efficient charge-to-spin current conversion.
- Enables epitaxial growth of magnetic multilayers and synthetic antiferromagnets.
- Achieved low threshold current density (~10 MA cm⁻²) for magnetization switching and high domain wall velocities (up to 300 m s⁻¹).
Conclusions:
- Iridium-based HEAs are effective spin Hall materials for spintronics.
- These HEAs facilitate current-induced magnetization reversal and domain wall motion.
- HEAs show significant potential for high-performance spintronic applications.
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