Layer-controlled continuous MoS₂ growth using a spin-coatable metal precursor buffer

Area of Science:

• Materials Science
• Nanotechnology
• Chemical Engineering

Background:

• Continuous large-area molybdenum disulfide (MoS₂) growth is crucial for optoelectronics.
• Conventional chemical vapor deposition (CVD) faces challenges in precursor adsorption and uniform nucleation.

Purpose of the Study:

• To develop a method for efficient and reproducible continuous large-area MoS₂ growth.
• To overcome limitations of traditional CVD processes for 2D material fabrication.

Main Methods:

• A pH-optimized metal precursor buffer using sodium cholate (SC) was developed.
• Molybdenum oxide was transformed into a stable sodium molybdate (Na₂MoO₄)/SC complex.
• Uniform spin-coating of the precursor complex onto SiO₂/Si substrates was achieved at pH 5.3.

Main Results:

• Continuous, centimeter-scale MoS₂ films with controlled layer numbers were fabricated.
• The precursor complex facilitated uniform adsorption and controlled MoS₂ layer formation via CVD.
• MoS₂ growth was observed at temperatures as low as 500 °C, with growth kinetics characterized in real-time.

Conclusions:

• The developed spin-coating technique with a metal precursor buffer enables stable, scalable, and reproducible large-area MoS₂ growth.
• This method provides a robust pathway for producing transition metal chalcogenide structures for 2D material applications.
• The findings advance the development of next-generation optoelectronic devices.