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Oxidation Resistance Enhancement of Graphene-Oxide-Semiconductor Planar-Type Electron Sources Using Al2O3 Thin
Ren Mutsukawa1,2, Yoshinori Takao3, Hiromasa Murata2
1Department of Mechanical Engineering, Materials Science, and Ocean Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan.
None:
Graphene-oxide-semiconductor (GOS) planar electron-emitting devices with an aluminum oxide (Al2O3) protective layer were found to improve oxidation resistance and to be capable of emitting electrons through a protective film on the device. An electron-transparent oxidation resistance layer for the GOS device was achieved with a uniform 3 nm Al2O3 deposited by atomic-layer deposition at a low temperature of 100 °C after precleaning with H2O. A high electron emission current density of 1.01 mA/cm2 and a high electron emission efficiency of 0.49% were obtained from the GOS electron-emitting device with the uniform 3 nm Al2O3 protective film. The energy distribution of the electrons emitted from the GOS device with an Al2O3 protection layer was higher than the work function of the graphene electrode, which indicated that the primary factor in the degradation of electron emission efficiency of the GOS device by the Al2O3 protection layer was not the energy loss of the emitted electrons due to inelastic electron scattering within Al2O3 but the electron backscattering at the protection layer due to elastic electron scattering. These results suggest that the electron emission efficiency and current density of oxygen-tolerant GOS devices could be further improved by a uniform Al2O3 protective layer with a thickness below the mean free path of electron elastic scattering within Al2O3.
