Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.0K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.0K
Understanding Memory01:19

Understanding Memory

650
Memory is the retention of information or experiences over time, facilitated through three main processes: encoding, storage, and retrieval. Encoding is the process of inputting information into the memory system. For instance, when listening to a lecture, watching a play, reading a book, or having a conversation, the brain is actively encoding information. This initial stage involves transforming sensory input into a form that can be processed and stored by the brain. Various factors, such as...
650
System of Memory01:23

System of Memory

6.5K
Memory is categorized into three major systems: sensory memory, short-term memory (STM), and long-term memory (LTM). These systems differ in their capacity and the duration for which they can hold information. Sensory memory captures raw sensory input from the environment, holding it for just a few seconds or less. For example, on hearing a brief, loud sound, like a car horn honking, the sound seems to linger in the mind for a moment even after it stops. This is an instance of sensory memory...
6.5K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

493
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
493
MOSFET01:16

MOSFET

593
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
593
Characteristics of MOSFET01:17

Characteristics of MOSFET

510
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
510

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

RETRACTED: Kim et al. The p53-Driven Anticancer Effect of <i>Ribes fasciculatum</i> Extract on AGS Gastric Cancer Cells. <i>Life</i> 2022, <i>12</i>, 303.

Life (Basel, Switzerland)·2026
Same author

Low-Heat and Near-Silent Pneumatic Source Driven by Integrated Endothermic-Exothermic Chemical Reactions for Soft Robots.

Soft robotics·2026
Same author

Mapping the acute trajectory of sport-related concussion outcomes across symptoms, cognition, and blood biomarkers.

Sports medicine and health science·2026
Same author

Light-Induced Entropy for Secure Vision.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Gate-Tunable Electron Trap Dynamics in Defect-Engineered MoS<sub>2</sub>-WSe<sub>2</sub> Heterostructures for Broadband Photodetection.

ACS nano·2025
Same author

An Ultrathin, Cyano-Functionalized Copolymeric Memristor by iCVD Process for Driving Convolutional Neural Networks of High-Resolution Images.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2025

Related Experiment Video

Updated: Sep 19, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.0K

MoS2 Channel-Enhanced High-Density Charge Trap Flash Memory and Machine Learning-Assisted Sensing Methodologies for

Ki Han Kim1, Ju Han Park1,2, Khang June Lee3

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu, 41566, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|June 10, 2025
PubMed
Summary
This summary is machine-generated.

Molybdenum disulfide (MoS2) offers a promising alternative channel material for 3D NAND Flash memory, addressing limitations of traditional silicon. This advancement supports high-density, low-power storage for AI edge computing.

Keywords:
3D NAND FlashMoS2machine learningnonvolatile memory

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.1K

Related Experiment Videos

Last Updated: Sep 19, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

8.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

11.1K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Engineering

Background:

  • Growing demand for high-density, low-power, reliable nonvolatile memory for AI edge computing.
  • Limitations of traditional 3D NAND Flash with polycrystalline silicon (Poly-Si) channels, including short-channel effects and cell-current constraints.
  • Need for alternative channel materials to overcome Poly-Si bottlenecks.

Purpose of the Study:

  • To investigate molybdenum disulfide (MoS2) as a novel channel material for 3D NAND Flash cells.
  • To evaluate the performance and reliability of MoS2-based nonvolatile memory.
  • To demonstrate the suitability of MoS2 for next-generation AI-centric edge devices.

Main Methods:

  • Fabrication and characterization of 3D NAND Flash cells using MoS2 as the channel material.
  • Electrical measurements including thickness-dependent characteristics and temperature-dependent conduction studies.
  • Technology Computer-Aided Design (TCAD) simulations and deep reinforcement learning-driven Berkeley Short-channel IGFET Model (BSIM) parameter calibration for circuit-level verification.

Main Results:

  • MoS2 enables hole-injection-based erase with a broader memory window at moderate voltages due to its low bandgap.
  • A low-k tunneling layer enhances the gate-coupling ratio, reducing program/erase voltages and improving reliability (10^4 cycles endurance, 10^5 s retention).
  • MoS2 channel thickness was correlated with endurance and retention metrics, validated through simulations and circuit-level testing.

Conclusions:

  • MoS2-based nonvolatile memory effectively meets the demands for high-density, low-power, and reliable storage.
  • This material presents a viable and promising solution for AI-driven edge computing applications.
  • The developed methodology is applicable for evaluating new channel materials in next-generation memory devices.