Wide Wavelength Band Responsive In₂Se₃/CIPS Heterojunction for Polarization Imaging Enhancement in Image Fusion.

Area of Science:

• Materials Science
• Optoelectronics
• Nanotechnology

Background:

• Polarization photodetectors face challenges including low sensitivity, slow response, and limited spectral range.
• Developing photodetectors with broad spectral response, high sensitivity, and excellent polarization sensitivity is crucial for advanced applications.

Purpose of the Study:

• To introduce an In2Se3/CIPS heterojunction for high-performance photodetection and polarization imaging.
• To achieve broadband detection in the visible to near-infrared region (400-808 nm).

Main Methods:

• Fabrication of an In2Se3/CIPS heterojunction.
• Characterization of photodetection, polarization-sensitive photodetection, and polarization imaging performance.
• Development of a hierarchical fusion strategy for polarization information processing.

Main Results:

• Achieved high responsivity (41.42 A/W at 532 nm) and specific detectivity (9.79 × 10^11 Jones at 532 nm).
• Demonstrated fast response times (0.17 s/0.33 s at 400 nm) and broadband polarization detection (6.04 at 400 nm).
• The hierarchical fusion strategy improved polarization imaging under complex optical fields.

Conclusions:

• The In2Se3/CIPS heterojunction offers superior performance compared to existing 2D heterojunction photodetectors.
• The developed strategy enhances environmental adaptability and promotes applications in high-precision photoelectric detection.
• This work paves the way for next-generation polarization imaging and sensing technologies.