Dislocation cluster generation behavior in multicrystalline silicon investigated using twin network analysis
Kazuma Torii1, Takuto Kojima2, Kentaro Kutsukake1,3,4
1Graduate School of Engineering, Nagoya University, Nagoya, Japan.
Abstract:
We utilized twin network analysis of polycrystalline materials through graph theory to visualize microstructures and examine the behavior of dislocation cluster generation in multicrystalline silicon grown by directional solidification. This approach allows for a rapid and statistical understanding of microstructures and their correlations by representing these features and their changes as network graphs. Our analysis revealed that dislocation clusters are formed at asymmetric Σ27a grain boundaries, which result from a specific twinning process. Gaining this knowledge is expected to assist in identifying grain boundary groups that can minimize the formation of dislocation clusters.
Related Concept Videos
01:22Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
01:21Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
02:18X-ray Crystallography
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...