Related Experiment Video

Updated: Jun 12, 2025

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
09:33

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

Published on: June 7, 2019

6.3K

Strong electric field enhancement near an amorphous silicon metasurface with non-vertical symmetry

Zi-Jian Qu1,2, Wen-Juan Shi1,2, Zhao-Lu Wang1

  • 1State Key Laboratory of Ultrafast Optical Science and Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China. liuhongjun@opt.ac.cn.

Nanoscale Horizons
|June 11, 2025
PubMed

More Related Videos

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

5.7K
Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers09:18

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Published on: February 8, 2022

4.0K

Related Concept Videos

Electric Field at the Surface of a Conductor01:26

Electric Field at the Surface of a Conductor

Consider a conductor in electrostatic equilibrium. The net electric field inside a conductor vanishes, and extra charges on the conductor reside on its outer surface, regardless of where they originate.
In the 19th century, Michael Faraday conducted the famous ice pail experiment to prove that the charges always reside on the surface of a conductor. The experimental set-up consists of a conducting uncharged container mounted on an insulating stand. The outer surface of the container is...
4.6K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
220
Induced Electric Fields: Applications01:27

Induced Electric Fields: Applications

An important distinction exists between the electric field induced by a changing magnetic field and the electrostatic field produced by a fixed charge distribution. Specifically, the induced electric field is nonconservative because it does not work in moving a charge over a closed path. In contrast, the electrostatic field is conservative and does no net work over a closed path. Hence, electric potential can be associated with the electrostatic field but not the induced field. The following...
1.6K
Electric Field of Parallel Conducting Plates01:16

Electric Field of Parallel Conducting Plates

Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric...
889
Induced Electric Fields01:23

Induced Electric Fields

The fact that emfs are induced in circuits implies that work is being done on the conduction electrons in the wires. What can possibly be the source of this work? We know that it’s neither a battery nor a magnetic field, as a battery does not have to be present in a circuit where current is induced, and magnetic fields never do any work on moving charges. The source of the work is in fact an electric field that is induced in the wires. For example, if a stationary conductor is placed in a...
3.6K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
300