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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

Mengyuan Yu1,2, Yi Shen1,2, Hongping Ma1,2,3

  • 1Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)
|June 11, 2025
PubMed
Abstract

Keywords:
SiC MOSFETbreakdown voltagetermination

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