Yi Shen
6PUBLICATIONS
3CO-AUTHORS
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Publications (6)
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|Jul 12, 2025
Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen-Oxygen Ratios.Wen-Jie Chen, Yang-Chao Liu, Zhen-Yu Wang
|Jun 11, 2025
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET.Mengyuan Yu, Yi Shen, Hongping Ma
|May 07, 2025
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors.Qimin Huang, Yunduo Guo, Anfeng Wang
|Apr 11, 2025
Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers.Zhenyu Wang, Zhaopeng Bai, Yunduo Guo
|Mar 12, 2025
High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures.Qimin Huang, Yunduo Guo, Anfeng Wang
|Dec 11, 2022
Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition.Yi Shen, Hong-Ping Ma, Lin Gu
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