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Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition.

Yi Shen1,2, Hong-Ping Ma1,2,3, Lin Gu1,2

  • 1Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

Nanomaterials (Basel, Switzerland)
|December 11, 2022
PubMed
Summary

Tin doping in Gallium Oxide (Ga2O3) films enhances transparency and modifies electrical properties. This research details how tin doping impacts microstructure, band structure, and breakdown modes in Ga2O3 for transparent device applications.

Keywords:
Ga2O3 filmSn dopingX-ray photoelectron spectroscopyelectrical propertiesenergy band alignmentplasma-enhanced atomic layer deposition

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Thin Film Technology

Background:

  • Gallium Oxide (Ga2O3) is a promising wide-bandgap semiconductor for power electronics and transparent devices.
  • Controlling doping in Ga2O3 is crucial for tailoring its optoelectronic properties.
  • Atomic layer deposition (ALD) offers precise control over thin film composition and structure.

Purpose of the Study:

  • To investigate the effects of tin (Sn) doping on the properties of Ga2O3 films.
  • To systematically analyze changes in chemical state, microstructure, optical, and electrical characteristics.
  • To provide a foundation for designing Sn-doped Ga2O3 transparent devices.

Main Methods:

  • Plasma-enhanced atomic layer deposition (PEALD) for Sn-doped Ga2O3 film deposition.
  • X-ray reflectivity (XRR) and spectroscopic ellipsometry for structural and optical analysis.
  • Analysis of chemical states, band alignment, and electrical properties (including C-V characteristics).

Main Results:

  • All Sn-doped Ga2O3 films exhibited high transparency (>90%) in the UV-visible range.
  • Sn doping influenced film density, refractive index, and extinction coefficient.
  • Increased Sn content led to higher Sn-O bonding, reduced oxygen vacancies, and a decreased bandgap (4.73 to 4.31 eV).
  • Breakdown mode shifted from hard to soft breakdown with increasing Sn content.
  • Sn-doped Ga2O3 films demonstrated large permittivity.

Conclusions:

  • Sn doping is an effective method to tune the properties of Ga2O3 films.
  • The observed changes in band structure and electrical properties are linked to reduced oxygen vacancies.
  • These findings support the use of Sn-doped Ga2O3 in transparent electronic devices.