Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen-Oxygen Ratios

Silicon oxynitride (SiO_xN_y, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO₂) and silicon nitride (Si₃N₄). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.3. However, the underlying mechanism governing the influence of elemental composition on film structural quality remains insufficiently understood. To address this knowledge gap, we systematically investigate the effects of key industrial plasma-enhanced chemical vapor deposition (PECVD) parameters-including precursor gas selection and flow rate ratios-on SiON film properties. Our experimental measurements reveal that stoichiometric SiO_xN_y (x = y) achieves a minimum surface roughness of 0.18 nm. As oxygen content decreases and nitrogen content increases, progressive replacement of Si-O bonds by Si-N bonds correlates with increased structural defect density within the film matrix. Capacitance-voltage (C-V) characterization demonstrates a corresponding enhancement in device capacitance following these compositional modifications. Recent studies confirm that controlled modulation of film stoichiometry enables precise tailoring of dielectric properties and capacitive behavior, as demonstrated in SiON-based power electronics, thereby advancing applications in related fields.