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Buried Interface Modification Strategy for Efficient Tin-Based Perovskite Light-Emitting Diodes
Zheng Jiang1, Jie Yang2, Wenbin Wang1
1Jiangsu Collaborative Innovation Center for Advanced Inorganic Functional Composites, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, 211816, China.
Angewandte Chemie (International Ed. in English)
|June 11, 2025
Summary
Tin-based perovskites offer eco-friendly, high-performance light-emitting diodes (LEDs). A new buried-interface-modification strategy improves Sn-based perovskite film crystallization, boosting LED efficiency.
Area of Science:
- Materials Science
- Optoelectronics
- Solid-State Chemistry
Background:
- Tin (Sn)-based perovskites are promising for environmentally friendly and high-performance light-emitting diodes (LEDs).
- Development of Sn-based perovskite LEDs (PeLEDs) lags behind lead-based counterparts due to rapid crystallization and high defect density, causing non-radiative recombination.
- Defects in Sn-based perovskite films hinder their efficiency and stability for optoelectronic applications.
Purpose of the Study:
- To develop a strategy to control the crystallization kinetics of Sn-based perovskite films.
- To improve the quality of Sn-based perovskite films for high-performance PeLEDs.
- To address the limitations of Sn-based perovskites in achieving efficient light emission.
Main Methods:
- Demonstrated a buried-interface-modification (BIM) strategy using carboxylate as multifunctional surface modifiers.
- Regulated the nucleation and crystallization processes of Sn-based perovskite films.
- Investigated the critical role of the buried interface in film formation.
Main Results:
- Achieved efficient near-infrared Sn-based PeLEDs with an external quantum efficiency (EQE) of 11.9%.
- The BIM strategy effectively regulated crystallization kinetics, leading to improved film quality.
- Demonstrated that the buried interface is crucial for enhanced nucleation and crystallization.
Conclusions:
- The BIM strategy provides an efficient and elegant route for obtaining high-performance Sn-based perovskite films.
- This approach can significantly advance the development of Sn-based PeLEDs.
- Interface engineering is key to overcoming the challenges in Sn-based perovskite optoelectronics.
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