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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors

Bei Zhao1,2, Zucheng Zhang1, Junqing Xu3

  • 1Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory of Chemo and Biosensing, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.

Science (New York, N.Y.)
|June 12, 2025
PubMed

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