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MoS2-based optoelectronic synapse for artificial neural visual system application
Mengyang Li1, Hui Yan2, Wenhao Fan2
1Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China; Tianjin Key Laboratory of Quantum Optics and Intelligent Photonics, School of Science, Tianjin University of Technology, Tianjin 300384, China.
Journal of Colloid and Interface Science
|June 12, 2025
Summary
Researchers developed a novel plasma-treated molybdenum disulfide (MoS2) optoelectronic artificial synapse. This device mimics brain functions for advanced neuromorphic computing and artificial visual systems.
Area of Science:
- Materials Science
- Neuroscience
- Electrical Engineering
Background:
- Neuromorphic computing requires high-performance artificial synapse devices.
- Optoelectronic artificial synapses integrate photoelectric detection with synaptic functions for visual information processing.
- Current devices face challenges in complexity, fabrication, and integration, driving interest in 2D materials like MoS2 for their efficiency and size.
Purpose of the Study:
- To propose and construct a plasma-treatment MoS2 optoelectronic artificial synapse.
- To evaluate its optoelectronic performance and synaptic emulation capabilities.
- To explore its potential applications in neuromorphic computing and artificial visual systems.
Main Methods:
- Fabrication of a MoS2 optoelectronic artificial synapse device using plasma treatment.
- Characterization of optoelectronic performance under various laser wavelengths (405, 520, 638 nm).
- Simulation of synaptic behaviors (e.g., memory transition, paired pulse facilitation) and emulation of human color recognition and image processing.
Main Results:
- The device demonstrated good optoelectronic performance, optimal at 405 nm with a responsivity of 187 mA/W, EQE of 59.84%, and detectivity of 6.54 × 109 Jones.
- Gate-voltage-dependent characteristics confirmed its capability for optoelectronic logic calculations.
- Successful simulation of synaptic plasticity, memory transitions, and Ebbinghaus forgetting curve.
- Emulation of human color recognition and image preprocessing/recognition for visual neural systems.
Conclusions:
- The plasma-treatment MoS2 device integrates optoelectronic detection and synaptic functions efficiently.
- The device exhibits promising characteristics for neuromorphic computing and artificial neuro visual systems.
- This work highlights the potential of 2D materials in developing next-generation computing architectures.
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