Enhanced luminescence efficiency in GaN-based blue laser diodes by H plasma technology

To the best of our knowledge, this paper is the first to report the application of H plasma treatment technology to the treatment of laser diode ridge. Through the H plasma passivation on the ridge of the laser diode, a neutral complexes layer (i.e., Mg-H) is formed on the ridge, which effectively reduces ridge leakage current, thus reducing the threshold current of the laser diode and significantly improving the slope efficiency. The ridge were treated with H plasma using the Oxford Plasmalab System 100 ICP 180. The lasers' leakage current, optical power, emission wavelength, and other parameters were measured using a Cascade150 + B1505A probe station system, along with matched optical power meters and fiber optic spectrometers. Specifically, this study successfully fabricates a GaN-based blue laser diode characterized by a threshold current as low as 0.42 A and a slope efficiency as high as 1.96 W/A. Compared with the traditional silicon oxide-mediated ridge treated laser, the threshold current of the laser passivated by H plasma is reduced by 0.13 A, and the slope efficiency is increased by 0.56 W/A. This research not only enhances the performance of laser diodes but also has the potential to expand their application in multiple fields.