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Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer.

Michael Wang, Wenting Gong, Feng Wu

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    |June 14, 2025
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    Researchers developed new ultraviolet (UV) Light Emitting Diodes (LEDs) using p-GaN islands to boost light extraction. This innovation achieved record efficiencies for UVB LEDs emitting at 300 and 310 nanometers.

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    Area of Science:

    • Optoelectronics
    • Semiconductor Physics
    • Materials Science

    Background:

    • Ultraviolet (UV) Light Emitting Diodes (LEDs) are crucial for various applications, but light extraction efficiency remains a challenge.
    • Improving deep UV emission, particularly in the UVB spectrum (280-315 nm), requires novel approaches to overcome internal optical losses.

    Purpose of the Study:

    • To investigate the impact of ultrathin low-coverage p-GaN hole injection islands on light extraction in UV LEDs.
    • To achieve world-record efficiencies for AlGaN-based UVB LEDs operating at 300 nm and 310 nm.

    Main Methods:

    • Fabrication of UV LEDs utilizing p-GaN islands on the top surface.
    • Optimization of p-GaN island parameters including density, size, thickness, and doping concentration.
    • Characterization of device performance, focusing on external quantum efficiency (EQE) and wall plug efficiency (WPE) under continuous wave (CW) operation.

    Main Results:

    • Demonstrated world-record UVB AlGaN UV LEDs emitting at 300 nm and 310 nm.
    • A 300 nm device achieved a peak CW external quantum efficiency (EQE) of 18.9% and a peak CW wall plug efficiency (WPE) of 16.8%.
    • A 310 nm device achieved a peak CW EQE of 20.3% and a peak CW WPE of 15.4%, with significant EQE maintained at high current densities (20 A/cm²).

    Conclusions:

    • Ultrathin low-coverage p-GaN islands are an effective strategy for enhancing light extraction in UV LEDs.
    • The optimized p-GaN island approach enables record-breaking performance for UVB AlGaN LEDs.
    • This method holds significant promise for advancing deep UV optoelectronic device technology.