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Published on: September 8, 2017
Giant Band Gap Narrowing under Hydrostatic Pressure in (4FP)2SnI4 Halide Perovskite
Rafał Bartoszewicz1, Jakub Ziembicki1, Ewelina Zdanowicz1
1Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, WybrzeŻe Wyspiańskiego 27, 50-370 Wrocław, Poland.
Abstract:
One of the most intriguing properties of hybrid halide perovskites is their structural softness. The interplay between organic and inorganic sublattices leads to a multitude of physical phenomena that are not observed in conventional semiconductors such as III-V materials. One among these is the exceptional band gap tunability under hydrostatic pressure. In this context, tin-based perovskites exhibit a more pronounced effect than their lead-based counterparts. Here, we report on one of the largest band gap tunabilities in this material family. The studied material, layered tin-based (4FP)2SnI4 perovskite, exhibits an exceptionally strong pressure sensitivity, with a band gap shift of up to -160 meV/GPa at room temperature. Combined experimental and computational studies reveal that its band gap dependence on pressure remains linear in the 0-5 GPa range, making (4FP)2SnI4 highly attractive for pressure-sensor applications.
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