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Updated: Sep 19, 2025
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
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Giant and Anisotropic Spin Relaxation Time in van der Waals GeSe With Gate-Tunability
Shiming Wu1, Qipeng Wu1, Yuxiang Zhang1
1Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|June 17, 2025
Summary
Two-dimensional Germanium Selenide (2D GeSe) demonstrates efficient spin injection and transport, crucial for next-generation spintronic devices. This air-stable material exhibits tunable spin properties, overcoming previous challenges in 2D semiconductors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) materials offer unique carrier transport properties for spintronics.
- Electrical spin injection and detection in 2D semiconductors remain significant challenges.
Purpose of the Study:
- To investigate efficient spin injection and transport in 2D Germanium Selenide (GeSe).
- To explore the potential of 2D GeSe as a channel material for spintronic devices.
Main Methods:
- Non-local magnetoresistance (MR) measurements were performed on 2D GeSe.
- Spin polarization, spin diffusion length, and spin relaxation time were characterized.
- Temperature-dependent measurements and gate voltage tuning were employed.
Main Results:
- High spin polarization (up to 25.38%) and long spin diffusion lengths (up to 397.04 nm) were achieved.
- Giant spin relaxation time (17.6 ns) and gate-tunable spin transport were observed.
- Successful demonstration of local MR in a two-terminal lateral spin valve.
Conclusions:
- 2D GeSe is a promising, air-stable 2D semiconductor for spintronic applications.
- Its anisotropic and gate-tunable spin transport capabilities address key challenges in the field.
- This work paves the way for novel spintronic devices based on emerging 2D materials.
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