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Published on: May 28, 2016
Electron backscattering coefficient, material contrast and response function of BSE- detectors in scanning electron
1Department of Physical Electronics, Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia.
New empirical expressions accurately determine electron backscattering coefficients (η) and detector response functions (F) in scanning electron microscopes (SEM). This improves understanding of backscattered electron (BSE) signals and image contrast across various materials and energies.
Area of Science:
- Materials Science
- Physics
- Electron Microscopy
Background:
- Accurate characterization of electron backscattering is crucial for quantitative analysis in scanning electron microscopy (SEM).
- Existing models for electron backscattering coefficients (η) and detector response functions (F) have limitations in precision and energy range.
- Understanding the dependence of backscattered electron (BSE) signals on material properties and SEM parameters is essential for image formation.
Purpose of the Study:
- To establish precise empirical expressions for the electron backscattering coefficient (η), mean backscattered energy coefficient (ε), and response function (F) of BSE detectors.
- To investigate the dependence of the BSE signal (IS) on the atomic number (Z) of the target material and primary electron energy (EB).
- To analyze the influence of the response function (F) on BSE signal formation and image contrast in SEM.
Main Methods:
- Development of empirical expressions for η, ε, and F based on atomic number (Z) and primary electron energy (EB).
- Validation of expressions across a wide energy range (1-30 keV) for bulk specimens.
- Comparison of characteristics obtained with commercial semiconductor/scintillation BSE detectors against multichannel plate (MCP) detectors.
Main Results:
- Established new empirical expressions providing more accurate η data than previous studies over the 1-30 keV energy range.
- Described the dependence of the BSE signal (IS) on target material atomic number (Z) and SEM accelerating voltage (EB).
- Quantified the influence of the response function (F) on BSE signal formation and image contrast, considering Z-differences and EB.
Conclusions:
- The derived empirical expressions offer improved accuracy for BSE signal quantification in SEM.
- The study provides a better understanding of image contrast formation influenced by material composition and SEM operating parameters.
- The findings are applicable to standard SEM BSE detectors and offer a basis for further detector characterization.
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