Stacking-controlled magnetic anisotropy switching in bilayer Janus Mn2Cl3Br3
Yanle Liang1, Heng Gao1, Hui Zhang1
1Physics Department, Materials Genome Institute, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Institute for Quantum Science and Technology, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China. gaoheng@shu.edu.cn.
None:
Bilayer Janus Mn2Cl3Br3 exhibits intriguing tunable magnetic anisotropy energy (MAE), governed by stacking configurations and halogen-specific orbital interactions. Using density functional theory (DFT), we find that AA stacking in Mn2Cl3Br3 induces a MAE transition from in-plane to out-of-plane orientation, which is absent in bilayer Mn2Br3I3 and Mn2Cl3I3. This switching is driven by a compressed Mn-Br interlayer distance that amplifies the positive contribution of MAE from the px and py interaction of Br while suppressing the pz-py contributions. In contrast, bilayer Janus Mn2Br3I3 and Mn2Cl3I3 preserve in-plane MAE due to the negative contribution of the pz-py interaction of I atoms. Stacking-dependent magnetic exchange interactions further modulate the MAE in bilayer Janus Mn2Cl3Br3 with AA stacking exhibiting enhanced vertical magnetic exchange anisotropy critical for MAE switching. In contrast, AB stacking preserves in-plane MAE due to suppressed magnetic interlayer coupling. The interplay of halogen orbital engineering and stacking order offers a versatile pathway to tune the magnetic anisotropy in van der Waals magnets for designing 2D spintronic materials.
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