Related Experiment Video
Updated: Sep 19, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Unveiling Under-the-Barrier Electron Dynamics in Strong Field Tunneling
Tsendsuren Khurelbaatar1,2, Michael Klaiber3, Suren Sukiasyan3,4
1POSTECH, Department of Physics, 77 Cheongam-Ro. Nam-Gu. Pohang. Gyeongbuk 37673, Republic of Korea.
None:
Ever since the advent of quantum mechanics, tunneling has been an intriguing topic and consequently extensively studied and utilized. Investigating both theoretically and experimentally the nonadiabatic tunneling in strong-field ionization across a wide range of laser intensities, we unravel under-the-barrier-recollision dynamics leading to Freeman resonances (FR). The under-the-barrier-recollision model, which goes beyond the traditional direct multiphoton transition description, predicts distinct features of FR phenomena that cannot be explained by the existing direct multiphoton transition scenario. Specifically, it predicts (i) the dominance of high-order FR over above-threshold ionization in the photoelectron energy spectra and (ii) the flat dependence of the FR signal on the laser intensity, both in the nonadiabatic tunneling regime. This Letter experimentally demonstrates these features, corroborating the under-the-barrier-recollision model, and provides intuition into this dynamics, expanding our insights into the control of tunneling dynamics in laser spectroscopy and attosecond physics.
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
The Energies of Atomic Orbitals
π Electron Effects on Chemical Shift: Overview
Electric Field at the Surface of a Conductor
In the 19th century, Michael Faraday conducted the famous ice pail experiment to prove that the charges always reside on the surface of a conductor. The experimental set-up consists of a conducting uncharged container mounted on an insulating stand. The outer surface of the container is...
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

