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Metal-Support Interaction Induced Electron Localization in Rationally Designed Metal Sites Anchored MXene Enables
Xiao Wang1, Gaolei Dong2, Fei Pan1
1Shanghai Key Lab of D&A for Metal-Functional Materials, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, People's Republic of China.
Abstract:
The electron localization is considered as a promising approach to optimize electromagnetic waves (EMW) dissipation. However, it is still difficult to realize well-controlled electron localization and elucidate the related EMW loss mechanisms for current researches. In this study, a novel two-dimensional MXene (Ti3C2Tx) nanosheet decorated with Ni nanoclusters (Ni-NC) system to construct an effective electron localization model based on electronic orbital structure is explored. Theoretical simulations and experimental results reveal that the metal-support interaction between Ni-NC and MXene disrupts symmetric electronic environments, leading to enhanced electron localization and dipole polarization. Additionally, Ni-NC generate a strong interfacial electric field, strengthening heterointerface interactions and promoting interfacial polarization. As a result, the optimized material achieves an exceptional reflection loss (RLmin) of - 54 dB and a broad effective absorption bandwidth of 6.8 GHz. This study offers critical insights into the in-depth relationship between electron localization and EMW dissipation, providing a pathway for electron localization engineering in functional materials such as semiconductors, spintronics, and catalysis.
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