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A simple and efficient synaptic device based on MoTe2-xOx/MoTe2heterojunction treated with oxygen plasma
Yanhui Xing1, Qingchen Han1,2, Zishuo Han1,2
1Key Laboratory of Opto-electronics Technology, Ministry of Education, School of Information Science and Technology, Beijing University of Technology, Beijing 100124, People's Republic of China.
None:
Two-dimensional (2D) materials are widely used in designing and fabricating artificial optoelectronic synapses due to their atomic-level thickness, ultra-high carrier mobility, strong light-matter coupling, and extreme sensitivity to electrostatic modulation. In this work, we present an artificial synapse based on a MoTe2-xOx/MoTe2heterojunction. Oxygen vacancy defects are introduced on the MoTe2surface via oxygen plasma treatment, enabling charge transfer and storage in the channel through defect utilization. The device demonstrates the ability of multi-terminal modulation under electrical and optical pulse stimulation, successfully simulating various synaptic behaviors such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Additionally, it achieves good synaptic weight update parameters under optoelectronic co-regulation and realizes a 96% image recognition accuracy in the artificial neural network. This work provides new insights into the structural design of 2D material-based photoelectric synapses for neuromorphic computing.
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