Dynamic Monolayer WSe2 Electrolyte-Gated Transistor with Coexistent Double Relaxation Timescale for Enhanced Physical

Dongdong Sun1, Ao Li1, Xinyang Deng1

  • 1School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.

Summary

This study introduces a novel WSe2 transistor exhibiting a double relaxation timescale (DRT) for enhanced physical reservoir computing (PRC). This breakthrough improves complex time series prediction capabilities in advanced computing applications.