Performer-KAN-Based Failure Prediction for IGBT with BO-CEEMDAN.
1School of Electrical and Electronic Engineering, Hubei University of Technology, Wuhan 430070, China.
Predicting Insulated Gate Bipolar Transistor (IGBT) failures is crucial for system reliability. A new Performer-KAN model, using Bayesian-optimized CEEMDAN for feature extraction, achieves superior accuracy in IGBT failure prediction with low computational cost.
Area of Science:
- Power Electronics
- Reliability Engineering
- Artificial Intelligence
Background:
- Insulated Gate Bipolar Transistors (IGBTs) are vital in power electronics but are prone to failure.
- Predicting IGBT failures is essential for ensuring system reliability and preventing catastrophic events.
Purpose of the Study:
- To develop an accurate and efficient prognostic model for IGBT failure prediction.
- To enhance real-time health monitoring and fault prediction capabilities for industrial applications.
Main Methods:
- Utilized Bayesian-optimized CEEMDAN (BO-CEEMDAN) for efficient extraction of fault features from IGBT data.
- Proposed a novel prognostic model, Performer-KAN, combining the Performer's FAVOR+ mechanism with Kolmogorov-Arnold Network (KAN) for enhanced nonlinear approximation.
Main Results:
- The Performer-KAN model demonstrated superior prediction accuracy, validated by metrics like MAE, RMSE, and R².
- Achieved higher predictive precision compared to six representative deep learning models.
- Maintained low computational overhead, indicating practical applicability.
Conclusions:
- The proposed Performer-KAN model offers a practical and effective solution for real-time IGBT health monitoring.
- The integration of BO-CEEMDAN and Performer-KAN significantly improves IGBT failure prediction accuracy and reliability.
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