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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation.

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A new virtual sensor for silicon carbide (SiC) MOSFETs estimates junction temperature using a numerical-analytical model (NAM) and readily available electrical data. This enables accurate real-time thermal monitoring in power converters.

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Area of Science:

  • Power Electronics
  • Semiconductor Devices
  • Thermal Management

Background:

  • Silicon carbide (SiC) MOSFETs offer high efficiency and reliability in power converters, especially at elevated temperatures.
  • Accurate thermal models are essential for estimating junction temperature and power losses, with switching loss evaluation being particularly challenging.
  • Real-time junction temperature monitoring is critical for optimizing performance and preventing device failure.

Purpose of the Study:

  • Develop a virtual sensor for real-time junction temperature estimation in SiC MOSFETs.
  • Create an accurate thermal model for SiC MOSFETs using a novel numerical-analytical model (NAM).
  • Validate the proposed model's accuracy against experimental data from a half-bridge converter.

Main Methods:

  • A numerical-analytical model (NAM) was developed using only datasheet parameters and electrical quantities (bus voltage and current).
  • The NAM was implemented in MATLAB with an iterative algorithm capturing switching transition physics.
  • A digital twin of an all-SiC board was created in PLECS, incorporating the computed energy losses for thermal modeling.

Main Results:

  • The virtual sensor accurately estimates junction temperature by leveraging readily available electrical data.
  • The developed NAM effectively models switching losses in SiC MOSFETs.
  • Simulation results were validated against experimental efficiency data, confirming model accuracy.

Conclusions:

  • The proposed virtual sensor and NAM provide an effective solution for real-time thermal monitoring of SiC MOSFETs.
  • The model's reliance on datasheet parameters and integrated sensors simplifies implementation in power converter systems.
  • Accurate thermal modeling is crucial for enhancing the efficiency and reliability of SiC-based power converters.