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High-χ Poly(fluorinated methacrylate)-block-Poly(acetoxystyrene) Block Copolymers for Sub-5 nm Nanopatterning
Zhenyu Yang1, Tangjun Zhang1, Desheng Zhan1
1State Key Laboratory of Molecular Engineering of Polymers and School of Microelectronics, Fudan University, Shanghai 200433, P. R. China.
ACS Applied Materials & Interfaces
|June 28, 2025
Summary
Novel block copolymers, poly(pentadecafluorooctyl methacrylate)-block-poly(4-acetoxystyrene) and poly(pentadecafluorooctyl methacrylate)-block-poly(3,4-diacetoxystyrene), enable sub-5 nm lithographic patterning and advanced organic electronics through self-assembly.
Area of Science:
- Polymer Chemistry
- Materials Science
- Nanotechnology
Background:
- Synthesis of block copolymers is crucial for creating nanostructured materials.
- Controlling domain size and morphology is key for advanced applications.
Purpose of the Study:
- To synthesize and characterize novel fluorinated block copolymers.
- To investigate their self-assembly behavior for nanolithography and electronic devices.
Main Methods:
- Reversible addition-fragmentation chain-transfer polymerization.
- Thermal annealing and characterization using SEM, AFM, and SAXS.
- Device fabrication and electrical testing of organic field-effect transistors.
Main Results:
- Achieved minimum cylindrical domain sizes of 5.0 and 4.8 nm.
- Demonstrated perpendicular orientation of domains on silicon substrates.
- Utilized boron-doped copolymer for a patterned nanocomposite in an organic FET with high performance.
Conclusions:
- The synthesized block copolymers exhibit controlled self-assembly for sub-5 nm patterning.
- These materials show promise for high-performance organic electronic devices.
