Employing Sub-6 nm Rapid Self-Assembly Fluorinated Block Copolymeric Supramolecules at Low Temperature for Organic...

As artificial synaptic transistor devices become increasingly important in simulating biological synaptic functions, it is crucial to design high-performance synaptic transistor memory using a facile and high-efficiency process. Herein, we demonstrate an organic synaptic transistor memory fabricated using poly(pentadecafluorooctyl methacrylate)-block-poly(4-vinylphenol) supramolecules with 1-aminopyrene (PPDFMA-b-(P4HS-APy)) as the polymer electret. The solution-processable PPDFMA-b-(P4HS-APy) can rapidly self-assemble into an ordered nanostructure with sub-6 nm domain size after annealing at a low temperature of 80 °C for only 10 min, which defines pyrene moieties into hydrophilic P4HS blocks surrounded by a hydrophobic and insulating PPDFMA matrix to form an effective electret. By optimizing the composition and tuning the nanostructure of the electret, a high-performance transistor device with a large memory window of 74 V, a high on/off current ratio of ∼10⁵, and outstanding memory stability over 10⁴ s was obtained. Additionally, a 6 × 6 synaptic transistor array was prepared, which exhibits good uniformity and can replicate versatile biological synaptic behaviors. Neuromorphic computing simulations constructed with the synaptic transistor reveal a high recognition accuracy of 91.6%. This study offers a strategy for preparing high-performance synaptic transistor devices using a facile and practical process.