Flexible self-powered MoS₂/LaVO₃photodetector enhanced by graphene quantum dots interlayer

High-performance self-powered photodetectors (PDs) have attracted significant interest as highly efficient optoelectronic devices capable of operating without an external power source. In this study, we demonstrate a flexible MoS₂/graphene quantum dots (GQDs)/LaVO₃heterojunction PD fabricated on a polyethylene terephthalate substrate. The device performance was systematically evaluated with and without the GQDs interlayer. The incorporation of GQDs effectively suppresses charge recombination, leading to substantial improvements in key performance metrics such as responsivity, external quantum efficiency, and detectivity. Furthermore, the MoS₂/GQDs/LaVO₃PD exhibited excellent mechanical stability, maintaining stable photocurrent and dark current levels even after 3000 continuous bending cycles. These results highlight the potential of the MoS₂/GQDs/LaVO₃PD as a highly promising candidate for next-generation flexible optoelectronic applications.