Single-pixel imaging system based on a high performance S-CYHEAPbI₃ self-powered detector

We carry out a route to fabricate the ferroelectric S-CYHEAPbI₃ polycrystalline films for photodetectors (PDs), with ITO/S-CYHEAPbI₃/Ag structure. The PD exhibits a good optoelectronic performance including an on-off ratio of 1.87 × 10⁴, a responsivity (R) of 14.3 A W^-1, and a detectivity of 5.42 × 10¹² Jones at a bias voltage of 0.3 V and the self-powered optoelectronic properties involving a R of 0.42 A W^-1 and a detectivity of 1.15 × 10¹² Jones. The frequency-modulation test and the transient absorption test together point out that the photo-generated carriers have to spend ∼0.02 eV to freely move in the S-CYHEAPbI₃ polycrystalline films, owing to the barrier of crystal domains. A single-pixel imaging system based on our PD can continuously obtain pattern information in power-free environments due to its self-powered capability and high photostability. These results open a new avenue for fabricating high-performance PD and broaden its application in optoelectronic devices.