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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Structure-property relationships of Group IV (Si-Ge-Sn) semiconductor nanocrystals and nanosheets - current
Jeremy B Essner1, Maharram Jabrayilov1, Andrew D Tan1
1Iowa State University, 618 Bissell Road, 2037 Sweeney Hall, Ames, Iowa 50011, USA. panthani@iastate.edu.
Abstract:
Group IV semiconductor nanomaterials, including silicon nanocrystals and more recently nanosheets, are emerging as promising candidates for next-generation optoelectronic applications due to their tunable room-temperature photoluminescence and compatibility with CMOS technologies. However, the intrinsic indirect bandgaps of Group IV seminconductors remains a key limitation. Here, we highlight our group's contributions toward understanding structure-property relationships in solution-processable Group IV semiconductor nanocrystals and nanosheets - specifically, understanding how their structure, surface chemistry, and chemical composition influence affect properties such as bandgap.
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