Low-Power Ternary Bipolar Memristor of Naturally Oxidized Porous Ti₃C₂T _x MXene Flakes

The multilevel characteristic of a single memristor cell offers a promising alternative to using multiple FETs for the same data storage capacity. Ti₃C₂T _x MXene, with its atomically thin structure and tunable surface-dependent electronic properties, is a strong candidate for multifunctional electronic materials and devices. However, the high conductivity of as-prepared Ti₃C₂T _x flakes limits their use in active electronic devices. Here, we present naturally oxidized porous Ti₃C₂T _x MXene flakes as promising materials for ion-based resistive switching memory (RSM) applications. The fabricated devices exhibit reproducible ternary memory behavior with low operating voltage, stable retention, and robust performance. We suggest that the drift of oxygen ions and the formation of metallic filaments in oxidized porous Ti₃C₂T _x are responsible for observed resistive switching. Our findings demonstrate that oxidized porous Ti₃C₂T _x MXene can be an alternative to traditional resistive switching materials and enhance multilevel memory technology.