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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Electrical Performance and Deep-Level Trap Characterization of p-CuGaO2/β-Ga2O3 Heterojunctions for Power

Chowdam Venkata Prasad1,2, Geon-Hee Lee3, Jang Hyeok Park1,2

  • 1Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.

ACS Applied Materials & Interfaces
|July 8, 2025
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Summary

Researchers explored p-CuGaO2/β-Ga2O3 heterojunctions to overcome p-type doping challenges in β-Ga2O3 power devices. This heterojunction shows improved electrical characteristics and reduced trap states, enhancing device performance.

Keywords:
DLTSSilvaco TCADbreakdown voltageinterface state densityp-CuGaO2β-Ga2O3

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • Gallium oxide (β-Ga2O3) is a promising material for power electronics.
  • Effective p-type doping remains a significant challenge for β-Ga2O3 devices.
  • Developing bipolar devices requires overcoming limitations in p-type conductivity.

Purpose of the Study:

  • Investigate the electrical characteristics of p-CuGaO2/β-Ga2O3 heterojunctions (HJ).
  • Analyze deep-level trap states in the HJ structure.
  • Evaluate the potential of this HJ for advanced power electronics.

Main Methods:

  • Fabrication and electrical characterization of p-CuGaO2/β-Ga2O3 HJ.
  • Comparison with Pt/β-Ga2O3 Schottky barrier diodes (SBD).
  • Deep-level transient spectroscopy (DLTS) for trap analysis.

Main Results:

  • The HJ demonstrated reduced turn-on voltage (Von) and on-resistance (Ron) compared to SBD.
  • A maximum breakdown voltage of 1.054 kV was achieved for the HJ.
  • Significant reduction in interface state density (NSS) and modulation of trap characteristics were observed.

Conclusions:

  • The p-CuGaO2/β-Ga2O3 HJ offers a viable solution for enhancing β-Ga2O3 power device performance.
  • Integration of p-CuGaO2 interlayer effectively modifies trap states and improves device characteristics.
  • This approach holds promise for reliable and high-performance β-Ga2O3-based power electronics.