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Related Experiment Video

Updated: Jan 7, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic

Madani Labed^1,2, Kanghee Shin¹, Mohammad Tauquir A S Shaikh¹

¹Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone and Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea.

|December 31, 2025

Summary

This summary is machine-generated.

A novel Ti/Mg/Ti multilayer metal stack achieves low-resistivity Ohmic contacts for beta-gallium oxide (β-Ga₂O₃) power electronics. This approach enhances device performance and stability, crucial for high-efficiency applications.

Keywords:

Ti/Mg/Ti low contact resistivity photodetector stacked structure β-Ga2O3

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

Materials Science and Engineering
Semiconductor Device Physics

Background:

Low-resistivity Ohmic contacts are critical for efficient beta-gallium oxide (β-Ga₂O₃) power electronics and deep-ultraviolet (DUV) optoelectronics.
Existing contact methods face challenges in achieving the necessary low resistance and stability for β-Ga₂O₃.

Purpose of the Study:

To develop and characterize a Ti/Mg/Ti multilayer metal stack for low-resistivity Ohmic contacts on (001) β-Ga₂O₃.
To investigate the role of Mg interlayer and annealing atmosphere on contact properties and transport mechanisms.

Main Methods:

Fabrication of Ti/Mg/Ti (20 nm/50 nm/20 nm) multilayer stacks on (001) β-Ga₂O₃.
Utilized Ultraviolet Photoelectron Spectroscopy (UPS) and X-ray Photoelectron Spectroscopy (XPS) for work function and interfacial analysis.
Employed Transmission Line Model (TLM) measurements at various temperatures and annealing conditions, alongside Transmission Electron Microscopy (TEM) for structural and compositional analysis.

Main Results:

Achieved a contact resistivity of 6.25 × 10^-4 Ω·cm² for Ti/Mg/Ti annealed at 400 °C in Ar.
Demonstrated tunneling-dominated carrier transport in inert atmospheres (Ar, vacuum, N₂) and thermionic emission in air, linked to oxidation levels.
Incorporated contacts into β-Ga₂O₃ Metal-Semiconductor-Metal (MSM) photodetectors, achieving high responsivity (14,240.7 A/W) under DUV illumination.

Conclusions:

The Ti/Mg/Ti multilayer stack effectively engineers low work function and provides oxidation protection for stable Ohmic contacts.
Annealing atmosphere critically influences the contact transport mechanism, with Ar yielding superior tunneling-based transport.
This approach offers a promising pathway for advanced β-Ga₂O₃ high-power and DUV optoelectronic devices.