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Updated: Jun 20, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
High-Throughput Ellipsometric Contrast Microscopy of Lateral 2D Heterostructures for Optoelectronics
Teja Potočnik1, Oliver Burton1, Suman K Chakraborty2
1Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge, CB3 0FA, UK.
None:
Covalently-bonded lateral 2D heterostructures offer unique (opto)electronic functionalities and can be deposited during a single growth process. However, the position of lateral junctions is typically uncontrolled due to random nucleation processes, which necessitates post-growth identification of suitable heterojunction regions for device integration. Here, ellipsometric contrast microscopy (ECM) is demonstrated to evaluate 2D lateral monolayer MoSe2-WSe2 and MoS2-WS2 heterostructures, which enables rapid imaging with high material-contrast down to sub-nanometer thickness for high-throughput characterisation of heterostructure domains. In addition, a computer vision algorithm provides precise identification of individual monolayer heterostructure junctions and their integration into rectifying devices and photodetectors. These results establish the advantages of ECM for reliable, fast characterization and large-scale integration of atomically thin 2D heterostructures into advanced optoelectronic devices, with potential extension to other nanomaterials.
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