Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

517
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
517
Schottky Barrier Diode01:27

Schottky Barrier Diode

500
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
500
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

336
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
336
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

489
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
489
Fermi Level Dynamics01:12

Fermi Level Dynamics

348
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
348
Biasing of FET01:22

Biasing of FET

372
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
372

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Flexible Surface Acoustic Wave (SAW) Magnetic Sensor Based on Terfenol-D Grating-Arrayed Thin Polymer Film.

Micromachines·2026
Same author

Compact adaptive spectral imager enabled by MEMS Fabry-Perot filtering chip in longwave infrared.

Microsystems & nanoengineering·2026
Same author

The fatty liver index exhibits a dual association with chronic obstructive pulmonary disease: a machine learning-based analysis of two independent cohorts.

Frontiers in nutrition·2026
Same author

Surface-hydrogenation activity regulation toward robust anti-poisoning of ZrCo-based hydrogen isotope storage materials.

Chemical science·2026
Same author

Physics-Guided Deep Learning for Interpretable Biomedical Image Reconstruction and Pattern Recognition in Diagnostic Frameworks.

Bioengineering (Basel, Switzerland)·2026
Same author

Surface Acoustic Wave Devices: New Mechanisms, Enabling Techniques, and Application Frontiers.

Micromachines·2026

Related Experiment Video

Updated: Sep 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K

Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation.

Akeel Qadir1,2,3, Munir Ali4, Afshan Khaliq5

  • 1School of Information Engineering, Xi'an Eurasia University, Xi'an 710065, China.

Nanomaterials (Basel, Switzerland)
|July 12, 2025
PubMed
Summary

We developed a novel graphene-trenched silicon Schottky junction for humidity sensing. This device uses humidity-induced doping of graphene on silicon to modulate the Schottky barrier, enabling sensitive and selective detection.

Keywords:
graphene-trenched silicon Schottky junctionhumidity sensorrelative humiditysensitivity

More Related Videos

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.4K
Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

11.3K

Related Experiment Videos

Last Updated: Sep 16, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.6K
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.4K
Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

11.3K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Devices

Background:

  • Humidity sensors are crucial for various applications, but existing technologies face limitations in sensitivity, selectivity, and power consumption.
  • Graphene-silicon Schottky junctions offer potential for advanced sensing due to their unique electronic properties.

Purpose of the Study:

  • To develop and characterize a novel graphene-trenched silicon Schottky junction for enhanced humidity sensing.
  • To investigate the sensing mechanism based on humidity-induced doping and Schottky barrier modulation.

Main Methods:

  • Fabrication of graphene-trenched silicon structures with varying trench widths.
  • Measurement and analysis of current-voltage (I-V) characteristics under different relative humidity levels.
  • Investigation of Schottky barrier height, ideality factor, and series resistance variations.

Main Results:

  • Humidity significantly modulates the Schottky barrier height and other device parameters.
  • The graphene-trenched structure enhances water adsorption sensing capabilities.
  • Larger trench widths influence graphene density of states, impacting sensor performance.

Conclusions:

  • The developed graphene-trenched silicon Schottky junction demonstrates tunable sensitivity, high selectivity, and low power consumption for humidity sensing.
  • This novel sensor architecture shows promise for industrial safety, environmental monitoring, and process control applications.