Research Progress and Future Perspectives on Photonic and Optoelectronic Devices Based on p-Type Boron-Doped

Shunhao Ge1, Dandan Sang1, Changxing Li1

  • 1Key Laboratory of Quantum Materials Under Extreme Conditions in Shandong Province, School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059, China.

Abstract