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High-Performance GaN-Based Green Flip-Chip Mini-LED with Lattice-Compatible AlN Passivation Layer.
Jiahao Song1, Lang Shi1, Siyuan Cui1
1Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China.
Nanomaterials (Basel, Switzerland)
|July 12, 2025
Summary
Optimized passivation layers improve mini-LED performance. A composite AlN/SiO2 layer significantly boosts external quantum efficiency (EQE) in GaN-based green mini-LEDs by reducing defects.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Gallium Nitride (GaN)-based mini-LEDs are crucial for advanced displays.
- Optimizing passivation layers is key to enhancing mini-LED external quantum efficiency (EQE) by mitigating sidewall defect carrier trapping.
Purpose of the Study:
- To improve the EQE of GaN-based green flip-chip mini-LEDs.
- To investigate the effectiveness of a lattice-compatible Aluminum Nitride (AlN) passivation layer.
Main Methods:
- Fabrication of GaN-based green flip-chip mini-LEDs.
- Deposition of a composite passivation layer using Atomic Layer Deposition (ALD) for AlN and Plasma-Enhanced Chemical Vapor Deposition (PECVD) for SiO2.
- Characterization of EQE performance.
Main Results:
- A composite ALD-AlN/PECVD-SiO2 passivation layer significantly reduced sidewall nonradiative recombination.
- The mini-LED with the composite layer achieved a peak EQE of 34.14% at 5 mA.
- This represents a 34.6% improvement compared to mini-LEDs with a single PECVD-SiO2 layer.
Conclusions:
- Lattice-compatible passivation layers, such as ALD-AlN, are effective in enhancing mini-LED performance.
- The composite ALD-AlN/PECVD-SiO2 passivation strategy offers a pathway to high-performance mini-LEDs.
- These findings provide valuable insights for the development of next-generation display technologies.
