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Updated: Aug 3, 2026

Liquid-cell Transmission Electron Microscopy for Tracking Self-assembly of Nanoparticles
Published on: October 16, 2017
Electron beam oxidation of silicon nitride membranes in liquid phase transmission electron microscopy
Sofie Tidemand-Lichtenberg1, Shima Kadkhodazadeh1, Kristian Speranza Mølhave1
1National Centre of Nano Fabrication and Characterisation, DTU Nanolab, Technical University of Denmark, Kongens Lyngby, Denmark. krmo@dtu.dk.
Abstract:
Electron beam induced effects in liquid phase transmission electron microscopy (LPTEM) encompass changes introduced to both the liquid sample and the material encapsulating the liquid. Typically, LPTEM beam effect studies have focused on the interaction of the electron beam with the liquid itself, while the interaction with the encapsulating material has often not been considered. Here, the chemical changes of silicon nitride (SiNx) thin films exposed to water, which are the conditions typically used in commercial LPTEM systems have been studied. Scanning transmission electron microscopy (STEM) was used in combination with electron energy-loss spectroscopy (EELS), from which the chemical and structural changes to the membrane over time were determined. The measurements reveal that the influence of the electron beam at high doses is significant, with SiNx transforming into silicon oxide (SiOx), when immersed in water and irradiated by the electron beam. The in situ EELS measurements indicate the release of both nitrogen (N2) and oxygen (O2) gas during irradiation, as well as the formation of an extended oxidized area of the membrane. Such changes can be reflected in measurements acquired from the liquid sample, and may in some cases instigate further chemical reactions in the liquid when the sample is subjected to high electron doses. For this reason, it can be necessary to identify the experimental conditions that limit the electron beam induced chemical transformation of SiNx. Alternatively, for measurements where high electron doses are required, changes to the encapsulating SiNx by the electron beam will also need to be taken into consideration in the analysis.
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