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Area of Science:

  • Materials Science
  • Optoelectronics
  • Solid-State Chemistry

Background:

  • Tin-halide perovskites show promise for near-infrared light-emitting diodes (NIR-LEDs).
  • Their practical application is hindered by extreme sensitivity to oxygen.
  • Developing air-stable perovskite materials is crucial for device commercialization.

Purpose of the Study:

  • To engineer stable tin-halide perovskite films for NIR-LEDs.
  • To overcome the oxygen sensitivity challenge in tin-halide perovskites.
  • To demonstrate the first functional tin-iodide perovskite device operating in ambient air.

Main Methods:

  • Designing self-encapsulated tin-halide perovskite films.
  • Incorporating 4,4'-diaminodiphenyl sulfone into precursor solutions.
  • In situ encapsulation of isolated tin-iodide perovskite particles.

Main Results:

  • Achieved outstanding air stability for tin-halide perovskite films.
  • Films exhibited high crystallinity, reduced trap density, and mitigated p-doping.
  • Photoluminescence quantum yield approached 50%, with NIR-LEDs reaching 12.4% external quantum efficiency.
  • Demonstrated the first functional tin-iodide perovskite device in ambient air.

Conclusions:

  • A facile strategy for creating air-stable tin-halide perovskites was developed.
  • The self-encapsulation method significantly enhances material stability and device performance.
  • This work paves the way for high-performance, stable tin-halide perovskite optoelectronics.