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Reconfigurable Submicron Electromechanical Switch with Volatile/Non-Volatile Conversion for Radiation-Hardened

Dianlun Li1, Junchang Chen2, Junchang Yang3

  • 1National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.

Small (Weinheim an Der Bergstrasse, Germany)
|July 22, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel nanowire switch that can function as both volatile logic and non-volatile memory. This reconfigurable microelectromechanical switch demonstrates excellent radiation hardness for advanced electronics.

Keywords:
lorentz force actuationmicro‐ and nanoelectromechanical switchesnon‐volatile and volatile operationsradiation‐hardened electronicsreconfigurable devices

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Micro- and nanoelectromechanical (MEM/NEM) switches are crucial for high-radiation environments like nuclear and space industries.
  • Current MEM/NEM systems require separate volatile switches for logic and non-volatile switches for memory.
  • A single MEM/NEM switch capable of both functions has not been previously demonstrated.

Purpose of the Study:

  • To develop a single reconfigurable submicron electromechanical switch with on-demand volatile/non-volatile conversion.
  • To enable unified integration of logic and memory in radiation-hardened electronics.
  • To demonstrate the switch's performance in high-radiation environments.

Main Methods:

  • Utilized a well-engineered nanowire (NW) cantilever for switch design.
  • Leveraged bidirectional Lorentz forces controlled by applied magnetic fields and ON-state bias current for mode selection.
  • Employed a reverse driving current for non-volatile mode reset, modulating Lorentz, mechanical restoring, and adhesive forces.

Main Results:

  • Demonstrated a reconfigurable nanowire switch with on-demand conversion between volatile and non-volatile modes.
  • Achieved selective operation via magnetic field and bias current, with reset using reverse current.
  • Experimentally verified radiation-hard performance up to 10 Mrad 60Co gamma irradiation with no degradation.

Conclusions:

  • The developed NW-based electromechanical switch successfully integrates logic and memory functions.
  • The switch exhibits exceptional radiation hardness, far exceeding silicon-based transistors.
  • This technology offers potential for reduced data transfer time and lower power consumption in radiation-hardened electronics.