Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

2.5K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.5K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
Valence Bond Theory02:42

Valence Bond Theory

9.7K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
9.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

514
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
514

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Synthetic Tuning of Exciton-Phonon Coupling in Janus WS<sub>2(1‑<i>x</i>)</sub>Se<sub>2<i>x</i></sub> Monolayers Revealed by Resonant Raman Excitation Spectroscopy for Optoelectronic Applications.

ACS applied nano materials·2026
Same author

Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO.

ACS nano·2026
Same author

Functionalization Enhanced Phase Separation in PS-b-PVP Derived Polyzwitterionic Block Copolymers.

Macromolecular rapid communications·2026
Same author

Spontaneous Polarization Suppression of Exciton-Exciton Annihilation in Rhombohedral-Stacked Bilayer Molybdenum Disulfide.

ACS nano·2026
Same author

Evidence of Chiral Fermion Edge Modes through Geometric Engineering of Thermal Hall Effect in α-RuCl_{3}.

Physical review letters·2026
Same author

Anticipating decoherence in quantum systems.

Nature communications·2026
Same journal

Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits.

ACS nano·2026
Same journal

Tunable Nanoparticle Thin-Film Reveals Distance Dependence of Auger-Mediated Radiation Enhancement in Diffuse Midline Glioma.

ACS nano·2026
Same journal

G-Quadruplex Network Engineering in Ionogels: Realizing Robust Biosensing Interfaces for Plant Electrophysiology.

ACS nano·2026
Same journal

Announcing the 2026 <i>ACS Nano</i> Lectureship and <i>ACS Nano</i> Impact Award Laureates.

ACS nano·2026
Same journal

Ultrafast Self-Assembly of Zeolitic Imidazolate Framework-8 Enables Antibody Orientation for Ultrasensitive Lateral Flow Immunoassays.

ACS nano·2026
Same journal

Interfacial Salt Engineering with Alkali and Ammonium Additives for Stable Pure-Blue Perovskite Light-Emitting Diodes and Micropatterned Displays.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Sep 14, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.6K

Autonomous Multistate Nanoencoding Using Combinatorial Ferroelectric Closure Domains in BiFeO3.

Marti Checa1, Ruben Millan-Solsona1, Yongtao Liu1

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

ACS Nano
|July 22, 2025
PubMed
Summary
This summary is machine-generated.

Researchers demonstrate autonomous patterning of ferroelectric topological domains in bismuth ferrite thin films. This method enables the creation of multistate memory devices with potential for high information density.

Keywords:
BiFeO3automated SPMclosure domainferroelectricstopological polar structures

More Related Videos

Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.7K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.2K

Related Experiment Videos

Last Updated: Sep 14, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.6K
Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

9.7K
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Ferroic materials offer advanced functionalities through topological defects.
  • Stable, customizable polar topologies are crucial for multistate electronic devices.
  • Bismuth ferrite (BiFeO3) is a key ferroic material for such applications.

Purpose of the Study:

  • To develop an autonomous method for patterning tunable topological domains in BiFeO3 thin films.
  • To utilize these domains as multistates for beyond-binary memory devices.
  • To assess the information storage potential of these engineered ferroelectric structures.

Main Methods:

  • Utilizing biased atomic force microscopy (AFM) tip scanning along designed paths.
  • Autonomously patterning striped closure domains and closed-loop structures.
  • Employing automated microscopy for symbolic writing and reading of information.

Main Results:

  • Successfully generated and manipulated highly tunable, intricate topological domain structures.
  • Achieved high spatial resolution patterning without electrodes or complex heterostructures.
  • Demonstrated proof-of-concept for ferroelectric beyond-binary memory using topological domains as multistates.

Conclusions:

  • Autonomous AFM patterning provides a route to engineer complex ferroelectric topological domains.
  • Engineered domains show promise for high-density, multistate information storage.
  • This approach advances the development of next-generation electronic devices.