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Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates
Hua Xu1,2, Kai Li1,2, Zuoquan Tan1,2
1Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China.
Abstract:
Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal-organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices.
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