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Updated: Sep 13, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Physical Unclonable Function with 3D Stacked Memristor Crossbar Array Using Self-Differential Pair.

Jinwoo Park¹, Hyungjin Kim¹

¹Division of Materials Science and Engineering and Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea.

|July 28, 2025

Summary

This summary is machine-generated.

Researchers developed a 3D stacked memristor crossbar array for a physical unclonable function (PUF). This novel device uses self-differential pairing to create a robust random entropy source, enhancing cryptographic security.

Keywords:

3D stacked crossbar array hardware security memristor nonvolatile memory physical unclonable function (PUF)self-differential pair

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Area of Science:

* Solid-state device physics and materials science.
* Advanced semiconductor fabrication techniques.
* Information security and cryptography.

Background:

* Physical unclonable functions (PUFs) are crucial for hardware security, relying on unique device variations for authentication.
* Traditional PUFs face challenges in achieving sufficient entropy and robustness against attacks.
* Memristor technology offers promising non-volatile memory and unique device characteristics for novel security applications.

Purpose of the Study:

* To demonstrate a 3D stacked memristor crossbar array with a self-differential pairing mechanism.
* To utilize this array as a random entropy source for a physical unclonable function (PUF).
* To evaluate the performance, robustness, and security of the proposed PUF chip.

Main Methods:

* Fabrication of a 2 × 32 × 32 3D stacked memristor crossbar array using back-end-of-line processes.
* Experimental verification of electrical switching characteristics for 2048 memristor devices.
* Implementation of a self-differential pairing mechanism using Kirchhoff's current law to sense current differences.

Main Results:

* Successful demonstration of the self-differential pairing mechanism in the 3D memristor array.
* Extraction of device-to-device variations as a random entropy source for PUF.
* Achieved a large challenge-response pair (CRP) space of ~6 × 10¹⁹ with demonstrated reconfigurability.
* Validated robustness and randomness using NIST test suites and machine learning attack simulations.

Conclusions:

* The 3D stacked memristor crossbar array with self-differential pairing provides a highly effective random entropy source for PUFs.
* This approach significantly enhances cryptographic security by offering a large CRP space and reconfigurability.
* The validated robustness against sophisticated attacks underscores the potential of this technology for secure hardware applications.