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Updated: Sep 13, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Influence of interface dielectric disorder on interlayer excitons in mixed binary/ternary TMD heterostructures

Mohammed Adel Aly1,2, Emmanuel Oghenevo Enakerakpor1, Hilary Masenda1,3

  • 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg 35032 Marburg Germany martin.koch@physik.uni-marburg.de mohammed.nouh@physik.uni-marburg.de.

Nanoscale Advances
|July 29, 2025
PubMed
Abstract

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