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Updated: Sep 13, 2025

Intermediate Strain Rate Material Characterization with Digital Image Correlation
Published on: March 1, 2019
Study on Anisotropic Mechanical Properties of Single-Crystal Silicon at Different Strain Rates
Zhongwang Tian1,2, Wei Xue2, Wenzhong Lou1
1School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Abstract:
To examine the impact of the strain rate on the anisotropic mechanical characteristics of single-crystal silicon, nanoindentation and micro-tensile-compression tests were performed. This study analyzed the effects of varying crystal orientations at different strain rates on load-displacement behavior, elastic modulus, hardness, fracture toughness, and true stress-strain responses. The nanoindentation results showed that at room temperature, single-crystal silicon exhibited an elastic recovery rate of approximately 42%. Notably, the elastic modulus remained unaffected by strain rate variations, whereas hardness increased with higher strain rates. Fracture toughness at room temperature displayed marked anisotropy, with the <100> orientation exhibiting the lowest value at 0.691 MPa·m1/2 and the <110> orientation showing the highest one at 0.797 MPa·m1/2. Additionally, tensile and compression experiments revealed that the fracture strength of <100>-oriented silicon increased from 117 MPa at a strain rate of 0.001 s-1 to 550 MPa at a strain rate of 0.01 s-1.
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