A Theoretical Analysis of the Frequency Response in p-i-n Photodiodes that Use InGaAs/InP Materials

This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa_1-xAs/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E_g), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E_g were also studied. Finally, we optimized the cutoff frequency (f_c), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode.